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Comment on Lifetime of metastable states in resonant tunneling structures. Authors' replyRODIN, Pavel; SCHOLL, Eckehard; TRETIAKOV, O. A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 4, pp 047301.1-047302.2, issn 1098-0121Article

Electrical switching behavior of amorphous Al23Te77 thin film sampleDAS, Chandasree; LOKESH, R; MOHAN RAO, G et al.Journal of non-crystalline solids. 2010, Vol 356, Num 41-42, pp 2203-2206, issn 0022-3093, 4 p.Article

Electrical switching in the CuO―ZnO―P2O5 glassesMIRZAYI, M; HEKMATSHOAR, M. H.Physica. B, Condensed matter. 2010, Vol 405, Num 21, pp 4505-4508, issn 0921-4526, 4 p.Article

Composition dependent electrical switching in GexSe35-xTe65 (18 ≤ x ≤ 25) glasses -the influence of network rigidity and thermal propertiesBHANU PRASHANTH, S. B; ASOKAN, S.Solid state communications. 2008, Vol 147, Num 11-12, pp 452-456, issn 0038-1098, 5 p.Article

Electrical switching behavior of bulk CuxAsSe1.4I0.2100―x glasses: Composition dependence and topological effectsSLANKAMENAC, Milos P; LUKIC-PETROVIC, Svetlana R; ZIVANOV, Miloš B et al.Solid state communications. 2012, Vol 152, Num 13, pp 1160-1163, issn 0038-1098, 4 p.Article

Thermal and electrical switching studies on Ge20Se80xBix (1 ≤ x ≤ 13) ternary chalcogenide glassy systemSRINIVASA RAO GUNTI; ASOKAN, S.Journal of non-crystalline solids. 2010, Vol 356, Num 33-34, pp 1637-1643, issn 0022-3093, 7 p.Article

The electrical switching and thermal behavior of bulk Ge15Te85―xSnx and Ge17Te83―xSnx glassesDAS, Chandasree; MOHAN RAO, G; ASOKAN, S et al.Journal of non-crystalline solids. 2012, Vol 358, Num 2, pp 224-228, issn 0022-3093, 5 p.Article

Electrical switching and thermal studies on Ge22Te78-ΧIΧ chalcohalide glasses: The effect of iodine on network-topologyPATTANAYAK, Pulok; ASOKAN, S.Solid state communications. 2007, Vol 142, Num 12, pp 698-701, issn 0038-1098, 4 p.Article

Electrical switching studies on Ge-Te-Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltagesMOHAMMAD MAHBUBUR RAHMAN; RUKMANI, K; ASOKAN, S et al.Journal of non-crystalline solids. 2011, Vol 357, Num 3, pp 946-950, issn 0022-3093, 5 p.Article

Fast optoelectronic crosspoint electrical switching of GaAs photoconductorsLAM, D. K. W; MACDONALD, R. I.IEEE electron device letters. 1984, Vol 5, Num 1, pp 1-3, issn 0741-3106Article

A new low-voltage electrically-adressed bistable nematic liquid-crystal boundary-layer displayCHENG, J; THURSTON, R. N; BOYD, G. D et al.Proceedings of the society for information display. 1983, Vol 24, Num 2, pp 180-185, issn 0734-1768Article

Bibliography of Switchgear literatureIEEE transactions on power delivery. 1990, Vol 5, Num 1, pp 177-188, issn 0885-8977Conference Paper

A digital control perspective for real-time modeling of electrical switching systemsLECHEVIN, Nicolas; RABBATH, Camille Alain; DUFOUR, Christian et al.IEEE control systems. 2005, Vol 25, Num 6, pp 69-85, issn 1066-033X, 17 p.Article

Resistance switching driven by polarity and voltage of electric pulse in Ag-La0.7Ca0.3NnO3-Pt sandwichesDONG, R; WANG, Q; CHEN, L et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 2, pp 265-268, issn 0947-8396, 4 p.Article

Techniques de Test pour Circuits à Courants Commutés = Test Techniques for Switched-Current CircuitsBodin, Jean-Charles; Bertrand, Yves.1999, 159 p.Thesis

Electrical switching effect in organic charge transfer compoundsIWASA, Y; WATANABE, N; KODA, T et al.Molecular crystals and liquid crystals (1969). 1990, Vol 183, pp 177-180, issn 0026-8941Conference Paper

A new double heterostructure optoelectronic switching device using molecular beam epitaxyTAYLOR, G. W; SIMMONS, J. G; CHO, A. Y et al.Journal of applied physics. 1986, Vol 59, Num 2, pp 596-600, issn 0021-8979Article

Electrical switching and thermal studies on bulk Ge-Te-Bi glassesDAS, Chandasree; MOHAN RAO, G; ASOKAN, S et al.Journal of non-crystalline solids. 2011, Vol 357, Num 1, pp 165-169, issn 0022-3093, 5 p.Article

ELECTRICAL AND OPTICAL EQUIVALENCE OF SURTCHING IN V-GROOVE PUNCH-THROUGH-MODE MISTCALLIGARO RB; NASSIBIAN AG.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 2; PP. 72-76; BIBL. 9 REF.Article

Parametric studies on the harvested energy of piezoelectric switching techniquesNEUBAUER, M; KRACK, M; WALLASCHEK, J et al.Smart materials and structures. 2010, Vol 19, Num 2, issn 0964-1726, 025001.1-025001.10Article

Dynamical polarization processes in double quantum dots coupled in seriesMICHATEK, G; BUTKA, B. R.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 27, issn 0953-8984, 275244.1-275244.7Article

Polymer memories : Bistable electrical switching and device performanceLING, Qi-Dan; LIAW, Der-Jang; TEO, Eric Yeow-Hwee et al.Polymer (Guildford). 2007, Vol 48, Num 18, pp 5182-5201, issn 0032-3861, 20 p.Article

Characterization and electrical switching properties of Cu-tetracyanoquinodimethane films formed under different conditionsSHUQING SUN; XIAOYIN XU; PEIJI WU et al.Journal of materials science letters. 1998, Vol 17, Num 9, pp 719-721, issn 0261-8028Article

Static and dynamic Fresnel zone lenses for optical interconnectionsFERSTL, M; FRISCH, A.-M.Journal of modern optics (Print). 1996, Vol 43, Num 7, pp 1451-1462, issn 0950-0340Article

New structure of three-terminal GaAs p+-n--δ(p+)-n--n+ switching device prepared by molecular beam epitaxyWANG, Y. H; YARN, K. F; CHANG, C. Y et al.Electronics Letters. 1987, Vol 23, Num 17, pp 873-875, issn 0013-5194Article

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